052-6295 rev a 7-2008 APT20GN60K(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci? ed. static electrical characteristics characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 2ma) gate threshold voltage (v ce = v ge , i c = 290a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 20a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 20a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts a na symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l APT20GN60K(g) 600 30 40 24 60 60a @ 600v 136 -55 to 175 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 175c switching safe operating area @ t j = 175c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. utilizing the latest field stop and trench gate technologies, these igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute minimum conduction loss. easy paralleling is a result of very tight parameter distribution and a slightly positive v ce(on) temperature coef? cient. low gate charge simpli? es gate drive design and minimizes losses. ? 600v field stop ? trench gate: low v ce(on) ? easy paralleling ? 6s short circuit capability ? 175c rated applications : welding, inductive heating, solar inverters, smps, motor drives, ups min typ max 600 5.0 5.8 6.5 1.1 1.5 1.9 1.7 25 1000 300 600v APT20GN60K APT20GN60Kg* *g denotes rohs compliant, pb free terminal finish. g c e microsemi website - http://www.microsemi.com to-220
052-6295 rev a 7-2008 APT20GN60K(g) 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ? gure 21, but with a silicon carbide dio de. 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 r g is external gate resistance, not including r g(int) nor gate driver impedance. (mic4452) microsemi reserves the right to change, without notice, the speci cations and information contained herein. thermal and mechanical characteristics unit c/w gm min typ max 1.1 n/a 1.2 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa scsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 20a t j = 175c, r g = 4.3 7 , v ge = 15v, l = 100h,v ce = 600v v cc = 360v, v ge = 15v, t j = 150c, r g = 4.3 7 inductive switching (25c) v cc = 400v v ge = 15v i c = 20a r g = 4.3 7 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 20a r g = 4.3 7 t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area short circuit safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 1110 50 35 9.5 120 10 70 60 6 9 10 140 95 230 260 580 9 10 160 130 250 450 750 unit pf v nc a s ns j ns j
052-6295 rev a 7-2008 APT20GN60K(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle 90 80 70 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 3.0 2.5 2.0 1.5 1.0 0.5 0 60 50 40 30 20 10 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature 15v 12v 11v 10v 13v 9v 8v t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c t j = 175c t j = 125c t j = 25c t j = -55c t j = 175c 14v 40 35 30 25 20 15 10 5 0 60 50 40 30 20 10 0 3.0 2.5 2.0 1.5 1.0 0.5 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 0 5 10 15 0 20 40 60 80 100 120 140 6 8 10 12 14 16 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 v ce = 120v i c = 20a t j = 25c v ce = 300v v ce = 480v i c = 40a i c = 20a i c = 10a i c = 40a i c = 20a i c = 10a v ge = 15v
052-6295 rev a 7-2008 APT20GN60K(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.3 l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature v ce = 400v t j = 25c , t j =125c r g = 4.3 l = 100 h 12 10 8 6 4 2 0 25 20 15 10 5 0 1400 1200 1000 800 600 400 200 0 3500 3000 2500 2000 1500 1000 500 0 250 200 150 100 50 0 140 120 100 80 60 40 20 0 1400 1200 1000 800 600 400 200 0 1400 1200 1000 800 600 400 200 0 v ge = 15v 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v r g = 4.3 , l = 100 h, v ce = 400v v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 4.3 t j = 125c t j = 25c e on2, 40a e off, 40a e on2, 10a e off, 20a e on2, 20a e off, 10a v ce = 400v v ge = +15v t j = 125c v ce = 400v v ge = +15v r g = 4.3 e on2, 40a e off, 40a e off, 20a e on2, 20a e on2, 10a e off, 10a
052-6295 rev a 7-2008 APT20GN60K(g) typical performance curves 1.20 1.00 0.80 0.60 0.40 0.20 0 z jc , thermal impedance (c/w) 0.3 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 2,000 1,000 500 100 50 10 70 60 50 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 figure 19b, transient thermal impedance model 5 10 15 20 25 30 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 4.3 140 100 50 10 7 c ies c oes c res 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 0.451 0.324 0.323 0.00078 0.00288 0.0501 power (watts) junction temp. ( c) rc model case temperature. ( c)
052-6295 rev a 7-2008 APT20GN60K(g) figure 22, turn-on switching waveforms and de? nitions figure 23, turn-off switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% i c a d.u.t. v ce figure 21, inductive switching test circuit v cc apt15dq60 source 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. .83 (.033) 2.79 (.110) 2.29 (.090) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) 3.40 (.133) dia. 3.10 (.123) dimensions in millimeters and (inches) gate drain 7.10 (.280) 6.70 (.263) 1.77 (.070) 3-plcs. 1.15 (.045) 2.85 (.112) 2.65 (.104) 3.70 (.145) 2.20 (.126) 0.48 (.019) 0.44 (.017) 5.33 (.210) 4.83 (.190) 12.192 (.480)- 9.912 (.390) 3.683 (.145)- max.- microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. to-220 package outline e1 sac: tin, silver, copper collector emitter
|
